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NVB190N65S3F
MOSFET, N-CH, 650V, 20A, TO-263
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVB190N65S3F
Newark Part No.41AH2118
Product RangeSUPERFET III
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $5.440 |
| 10+ | $4.340 |
| 25+ | $3.990 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVB190N65S3F
Newark Part No.41AH2118
Product RangeSUPERFET III
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id20A
On Resistance Rds(on)0.158ohm
Drain Source On State Resistance0.19ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd162W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation162W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeSUPERFET III
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCLead (27-Jun-2024)
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Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.158ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
162W
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
SUPERFET III
Automotive Qualification Standard
AEC-Q101
SVHC
Lead (27-Jun-2024)
Channel Type
N Channel
Continuous Drain Current Id
20A
Drain Source On State Resistance
0.19ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
162W
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability