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NVBG045N065SC1
Silicon Carbide MOSFET, Single, N Channel, 62 A, 650 V, 0.031 ohm, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVBG045N065SC1
Newark Part No.81AK4249
Product RangeEliteSiC Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 1+ | $25.830 |
| 10+ | $24.240 |
| 25+ | $22.850 |
| 50+ | $21.530 |
| 100+ | $20.210 |
| 250+ | $19.240 |
| 500+ | $18.460 |
| 1000+ | $17.830 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$25.83
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNVBG045N065SC1
Newark Part No.81AK4249
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id62A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.031ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.3V
Power Dissipation242W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
62A
Drain Source On State Resistance
0.031ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.3V
Operating Temperature Max
175°C
SVHC
No SVHC (15-Jan-2018)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
242W
Product Range
EliteSiC Series
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability