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NVH4L080N120SC1
Silicon Carbide MOSFET, Single, N Channel, 29 A, 1.2 kV, 0.08 ohm, TO-247
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVH4L080N120SC1
Newark Part No.74AH4861
Product RangeEliteSiC Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 13 week(s)
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| Quantity | Price |
|---|---|
| 1+ | $17.610 |
| 10+ | $17.530 |
| 25+ | $16.820 |
| 50+ | $16.150 |
| 100+ | $15.820 |
| 250+ | $15.540 |
Price for:Each
Minimum: 1
Multiple: 1
$17.61
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVH4L080N120SC1
Newark Part No.74AH4861
Product RangeEliteSiC Series
Technical Datasheet
Transistor PolarityN Channel
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id29A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.08ohm
Drain Source On State Resistance0.08ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.75V
Power Dissipation Pd170W
Power Dissipation170W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
0.08ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
2.75V
Power Dissipation
170W
Product Range
EliteSiC Series
MOSFET Module Configuration
Single
Continuous Drain Current Id
29A
On Resistance Rds(on)
0.08ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Power Dissipation Pd
170W
Operating Temperature Max
175°C
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate