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NVH4L095N065SC1
Silicon Carbide MOSFET, Single, N Channel, 31 A, 650 V, 0.105 ohm, TO-247
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNVH4L095N065SC1
Newark Part No.85AK4675
Product RangeEliteSiC Series
335 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $15.580 |
| 10+ | $14.790 |
| 25+ | $13.120 |
| 50+ | $11.430 |
| 100+ | $11.030 |
| 250+ | $10.630 |
Price for:Each
Minimum: 1
Multiple: 1
$15.58
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVH4L095N065SC1
Newark Part No.85AK4675
Product RangeEliteSiC Series
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id31A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.105ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.3V
Power Dissipation129W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
31A
Drain Source On State Resistance
0.105ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.3V
Operating Temperature Max
175°C
SVHC
No SVHC (15-Jan-2018)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
129W
Product Range
EliteSiC Series
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate