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NXH020F120MNF1PG
Silicon Carbide MOSFET, Full Bridge, Dual N Channel, 51 A, 1.2 kV, 0.02 ohm, Module
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 19 week(s)
| Quantity | Price |
|---|---|
| 1+ | $139.510 |
| 5+ | $134.930 |
| 10+ | $130.360 |
| 25+ | $125.770 |
| 50+ | $121.190 |
Price for:Each
Minimum: 1
Multiple: 1
$139.51
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH020F120MNF1PG
Newark Part No.81AK4281
Technical Datasheet
MOSFET Module ConfigurationFull Bridge
Channel TypeDual N Channel
Continuous Drain Current Id51A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.02ohm
Transistor Case StyleModule
No. of Pins22Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max4.3V
Power Dissipation119W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
MOSFET Module Configuration
Full Bridge
Continuous Drain Current Id
51A
Drain Source On State Resistance
0.02ohm
No. of Pins
22Pins
Gate Source Threshold Voltage Max
4.3V
Operating Temperature Max
175°C
SVHC
No SVHC (15-Jan-2018)
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
20V
Power Dissipation
119W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability