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NXH040P120MNF1PTG
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 30 A, 1.2 kV, 42 mohm, Module
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| Quantity | Price |
|---|---|
| 1+ | $74.390 |
| 5+ | $70.200 |
| 10+ | $66.020 |
| 25+ | $61.840 |
| 50+ | $57.670 |
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Multiple: 1
$74.39
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH040P120MNF1PTG
Newark Part No.32AK9491
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id30A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance42mohm
Transistor Case StyleModule
No. of Pins18Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.81V
Power Dissipation74W
Operating Temperature Max175°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
30A
Drain Source On State Resistance
42mohm
No. of Pins
18Pins
Gate Source Threshold Voltage Max
2.81V
Operating Temperature Max
175°C
SVHC
To Be Advised
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
20V
Power Dissipation
74W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate