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NXV04V120DB1
Bipolar (BJT) Single Transistor, Six N Channel, 160 A, 40 V, 0.0019 ohm, 10 V, 4 V
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 17 week(s)
| Quantity | Price |
|---|---|
| 1+ | $39.760 |
| 5+ | $38.140 |
| 10+ | $36.510 |
| 25+ | $35.700 |
| 88+ | $34.890 |
| 132+ | $34.080 |
| 264+ | $33.270 |
Price for:Each
Minimum: 1
Multiple: 1
$39.76
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXV04V120DB1
Newark Part No.54AH9550
Technical Datasheet
Transistor PolaritySix N Channel
Channel TypeSix N Channel
Continuous Drain Current Id160A
Drain Source Voltage Vds40V
On Resistance Rds(on)850µohm
Drain Source On State Resistance0.0019ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd-
Power Dissipation-
Operating Temperature Max175°C
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
Six N Channel
Continuous Drain Current Id
160A
On Resistance Rds(on)
850µohm
Rds(on) Test Voltage
10V
Power Dissipation Pd
-
Operating Temperature Max
175°C
SVHC
To Be Advised
Channel Type
Six N Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0019ohm
Gate Source Threshold Voltage Max
4V
Power Dissipation
-
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability