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TP65H050G4YS
Gallium Nitride (GaN) Transistor, 650 V, 35 A, 0.06 ohm, 16 nC, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerRENESAS
Manufacturer Part NoTP65H050G4YS
Newark Part No.97AK4780
Product RangeSuperGaN Series
Technical Datasheet
338 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $20.620 |
| 10+ | $16.030 |
| 25+ | $16.020 |
| 50+ | $16.010 |
| 100+ | $15.990 |
| 250+ | $15.960 |
| 900+ | $13.110 |
Price for:Each
Minimum: 1
Multiple: 1
$20.62
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Product Information
ManufacturerRENESAS
Manufacturer Part NoTP65H050G4YS
Newark Part No.97AK4780
Product RangeSuperGaN Series
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id35A
Drain Source On State Resistance0.06ohm
Typical Gate Charge16nC
Transistor Case StyleTO-247
Transistor MountingThrough Hole
No. of Pins4Pins
Product RangeSuperGaN Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.06ohm
Transistor Case Style
TO-247
No. of Pins
4Pins
Qualification
-
Continuous Drain Current Id
35A
Typical Gate Charge
16nC
Transistor Mounting
Through Hole
Product Range
SuperGaN Series
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability