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TP65H070G4LSGB-TR
Gallium Nitride (GaN) Transistor, 650 V, 29 A, 0.085 ohm, 8.4 nC, QFN, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerRENESAS
Manufacturer Part NoTP65H070G4LSGB-TR
Newark Part No.97AK4782
Product RangeSuperGaN Series
Technical Datasheet
691 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $13.850 |
| 10+ | $10.820 |
| 25+ | $10.290 |
| 50+ | $9.780 |
| 100+ | $9.250 |
| 250+ | $9.180 |
| 500+ | $9.090 |
| 1000+ | $9.010 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$13.85
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Product Information
ManufacturerRENESAS
Manufacturer Part NoTP65H070G4LSGB-TR
Newark Part No.97AK4782
Product RangeSuperGaN Series
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id29A
Drain Source On State Resistance0.085ohm
Typical Gate Charge8.4nC
Transistor Case StylePQFN
Transistor MountingSurface Mount
No. of Pins8Pins
Product RangeSuperGaN Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.085ohm
Transistor Case Style
PQFN
No. of Pins
8Pins
Qualification
-
Continuous Drain Current Id
29A
Typical Gate Charge
8.4nC
Transistor Mounting
Surface Mount
Product Range
SuperGaN Series
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability