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TP65H070G4PS
Gallium Nitride (GaN) Transistor, 650 V, 29 A, 0.085 ohm, 9 nC, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerRENESAS
Manufacturer Part NoTP65H070G4PS
Newark Part No.97AK4783
Product RangeSuperGaN Series
Technical Datasheet
179 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $12.610 |
| 10+ | $11.530 |
| 25+ | $10.440 |
| 50+ | $9.360 |
| 100+ | $9.140 |
| 250+ | $9.100 |
| 500+ | $9.060 |
Price for:Each
Minimum: 1
Multiple: 1
$12.61
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Product Information
ManufacturerRENESAS
Manufacturer Part NoTP65H070G4PS
Newark Part No.97AK4783
Product RangeSuperGaN Series
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id29A
Drain Source On State Resistance0.085ohm
Typical Gate Charge9nC
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
No. of Pins3Pins
Product RangeSuperGaN Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.085ohm
Transistor Case Style
TO-220AB
No. of Pins
3Pins
Qualification
-
Continuous Drain Current Id
29A
Typical Gate Charge
9nC
Transistor Mounting
Through Hole
Product Range
SuperGaN Series
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability