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TP65H300G4LSG-TR
Gallium Nitride (GaN) Transistor, 650 V, 6.5 A, 0.312 ohm, 9.6 nC, QFN, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerRENESAS
Manufacturer Part NoTP65H300G4LSG-TR
Newark Part No.97AK4789
Product RangeSuperGaN Series
Technical Datasheet
633 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $5.200 |
| 10+ | $3.570 |
| 25+ | $3.240 |
| 50+ | $2.920 |
| 100+ | $2.590 |
| 250+ | $2.450 |
| 500+ | $2.290 |
| 1000+ | $2.230 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$5.20
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Product Information
ManufacturerRENESAS
Manufacturer Part NoTP65H300G4LSG-TR
Newark Part No.97AK4789
Product RangeSuperGaN Series
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id6.5A
Drain Source On State Resistance0.312ohm
Typical Gate Charge9.6nC
Transistor Case StylePQFN
Transistor MountingSurface Mount
No. of Pins3Pins
Product RangeSuperGaN Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.312ohm
Transistor Case Style
PQFN
No. of Pins
3Pins
Qualification
-
Continuous Drain Current Id
6.5A
Typical Gate Charge
9.6nC
Transistor Mounting
Surface Mount
Product Range
SuperGaN Series
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability