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BSM250D17P2E004
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 250 A, 1.7 kV, Module
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 39 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1,031.040 |
Price for:Each
Minimum: 1
Multiple: 1
$1,031.04
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoBSM250D17P2E004
Newark Part No.88AH6162
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Transistor PolarityDual N Channel
Continuous Drain Current Id250A
Drain Source Voltage Vds1.7kV
Drain Source On State Resistance-
On Resistance Rds(on)-
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage-
Power Dissipation Pd1.8kW
Gate Source Threshold Voltage Max4V
Power Dissipation1.8kW
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Half Bridge
Transistor Polarity
Dual N Channel
Drain Source Voltage Vds
1.7kV
On Resistance Rds(on)
-
No. of Pins
-
Power Dissipation Pd
1.8kW
Power Dissipation
1.8kW
Product Range
-
Channel Type
Dual N Channel
Continuous Drain Current Id
250A
Drain Source On State Resistance
-
Transistor Case Style
Module
Rds(on) Test Voltage
-
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
150°C
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability