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                    • New Deals
                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Silicon Carbide (SiC) MOSFETs & Modules
                      Print Page

                      BSM600C12P3G201

                      Silicon Carbide MOSFET, Chopper, N Channel, 600 A, 1.2 kV, Module

                      Date/Lot Code

                      ROHM BSM600C12P3G201
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerROHM
                      Manufacturer Part NoBSM600C12P3G201
                      Newark Part No.88AH6170
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      2 In Stock

                      Need more?

                      Delivery in 2-4 Business Days(UK stock)
                      Order before 9pm EST standard shipping
                      QuantityPrice
                      1+$1,288.800
                      Price for:Each
                      Minimum: 1
                      Multiple: 1
                      $1,288.80
                      Enter Your Part No/Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerROHM
                      Manufacturer Part NoBSM600C12P3G201
                      Newark Part No.88AH6170
                      Technical Datasheet

                      Data Sheet

                      MOSFET Module ConfigurationChopper
                      Transistor PolarityN Channel
                      Channel TypeN Channel
                      Continuous Drain Current Id600A
                      Drain Source Voltage Vds1.2kV
                      Drain Source On State Resistance-
                      On Resistance Rds(on)-
                      Transistor Case StyleModule
                      No. of Pins-
                      Rds(on) Test Voltage-
                      Power Dissipation Pd2.46kW
                      Gate Source Threshold Voltage Max5.6V
                      Power Dissipation2.46kW
                      Operating Temperature Max150°C
                      Product Range-
                      SVHCTo Be Advised

                      Product Overview

                      BSM600C12P3G201 is a SiC power module. This product is a chopper module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Application includes motor drive, converter, photovoltaics, wind power generation.

                      • Low surge, low switching loss, high-speed switching possible
                      • Reduced temperature dependence
                      • 1.8V typical on-state static drain-source voltage (Tj=25°C, ID=600A,VGS=18V)
                      • 10uA maximum drain cut-off current (VDS=1200V,VGS=0V, Tj=25°C)
                      • Gate-source threshold voltage range from 2.7V to 5.6V (VDS=10V, ID=182mA, Tj=25°C)
                      • 2.8nF input capacitance typical (VDS=10V, VGS=0V, 100KHz, Tj=25°C)
                      • 70ns switching characteristics typical (Tj=25°C)
                      • 2500Vrms isolation voltage (terminals to baseplate, f=60Hz AC 1min)
                      • 1.4ohm typical gate resistance (Tj=25°C)
                      • Junction temperature range from -40°C to150°C

                      Technical Specifications

                      MOSFET Module Configuration

                      Chopper

                      Channel Type

                      N Channel

                      Drain Source Voltage Vds

                      1.2kV

                      On Resistance Rds(on)

                      -

                      No. of Pins

                      -

                      Power Dissipation Pd

                      2.46kW

                      Power Dissipation

                      2.46kW

                      Product Range

                      -

                      Transistor Polarity

                      N Channel

                      Continuous Drain Current Id

                      600A

                      Drain Source On State Resistance

                      -

                      Transistor Case Style

                      Module

                      Rds(on) Test Voltage

                      -

                      Gate Source Threshold Voltage Max

                      5.6V

                      Operating Temperature Max

                      150°C

                      SVHC

                      To Be Advised

                      Technical Docs (2)

                      Technical Data Sheet EN

                      EOL Notices EN

                      Legislation and Environmental

                      US ECCN:Unknown
                      EU ECCN:Unknown
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:To Be Advised
                      Download Product Compliance Certificate

                      Product Compliance Certificate

                      Product traceability

                      Date/Lot Code

                      Customer Service
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                      Sales 01.800.463.9275
                      Technical 01.800.463.9275
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