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R6008FNJTL
MOSFET, N-CH, 600V, 8A, TO-263
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 33 week(s)
| Quantity | Price |
|---|---|
| 1+ | $2.400 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.40
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Product Information
ManufacturerROHM
Manufacturer Part NoR6008FNJTL
Newark Part No.10AC9006
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id8A
On Resistance Rds(on)0.73ohm
Drain Source On State Resistance0.95ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation119W
Power Dissipation Pd119W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.73ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
119W
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source On State Resistance
0.95ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
119W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (23-Jan-2024)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability