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RQ3E100BNTB
MOSFET Transistor, N Channel, 10 A, 30 V, 0.0077 ohm, 10 V, 2.5 V RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
| 1+ | $0.577 |
| 10+ | $0.418 |
| 100+ | $0.314 |
| 500+ | $0.267 |
| 1000+ | $0.252 |
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Multiple: 1
$0.58
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Product Information
ManufacturerROHM
Manufacturer Part NoRQ3E100BNTB
Newark Part No.71Y9244
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id10A
On Resistance Rds(on)0.0077ohm
Drain Source On State Resistance0.0104ohm
Transistor Case StyleHSMT
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation2W
Power Dissipation Pd2W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0077ohm
Transistor Case Style
HSMT
Rds(on) Test Voltage
10V
Power Dissipation
2W
No. of Pins
8Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
10A
Drain Source On State Resistance
0.0104ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability