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SCT2160KEGC11
Silicon Carbide MOSFET, Single, N Channel, 22 A, 1.2 kV, 0.16 ohm, TO-247N
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| Quantity | Price |
|---|---|
| 1+ | $15.390 |
| 10+ | $12.530 |
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Multiple: 1
$15.39
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Product Information
ManufacturerROHM
Manufacturer Part NoSCT2160KEGC11
Newark Part No.45AJ7672
Technical Datasheet
Transistor PolarityN Channel
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id22A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.16ohm
Drain Source On State Resistance0.16ohm
Transistor Case StyleTO-247N
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.8V
Power Dissipation Pd165W
Power Dissipation165W
Operating Temperature Max175°C
Product Range-
SVHCLead (23-Jan-2024)
Technical Specifications
Transistor Polarity
N Channel
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
0.16ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.8V
Power Dissipation
165W
Product Range
-
MOSFET Module Configuration
Single
Continuous Drain Current Id
22A
On Resistance Rds(on)
0.16ohm
Transistor Case Style
TO-247N
Rds(on) Test Voltage
18V
Power Dissipation Pd
165W
Operating Temperature Max
175°C
SVHC
Lead (23-Jan-2024)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability