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SCT3080ARC14
Silicon Carbide MOSFET, Single, N Channel, 30 A, 650 V, 0.08 ohm, TO-247
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| Quantity | Price |
|---|---|
| 1+ | $17.710 |
| 10+ | $16.950 |
| 25+ | $12.880 |
| 60+ | $12.870 |
| 120+ | $12.310 |
| 270+ | $12.300 |
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Multiple: 1
$17.71
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Product Information
ManufacturerROHM
Manufacturer Part NoSCT3080ARC14
Newark Part No.34AH2697
Technical Datasheet
Transistor PolarityN Channel
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id30A
On Resistance Rds(on)0.08ohm
Drain Source Voltage Vds650V
Drain Source On State Resistance0.08ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Power Dissipation Pd134W
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.6V
Power Dissipation134W
Operating Temperature Max175°C
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Channel Type
N Channel
On Resistance Rds(on)
0.08ohm
Drain Source On State Resistance
0.08ohm
No. of Pins
4Pins
Rds(on) Test Voltage
18V
Power Dissipation
134W
Product Range
-
MOSFET Module Configuration
Single
Continuous Drain Current Id
30A
Drain Source Voltage Vds
650V
Transistor Case Style
TO-247
Power Dissipation Pd
134W
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
SVHC
To Be Advised
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
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