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SEMIX453GB12E4S
IGBT Module, Dual, 683 A, 1.8 V, 175 °C, SEMiX 3s
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| Quantity | Price |
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| 1+ | $442.730 |
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$442.73
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Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSEMIX453GB12E4S
Newark Part No.77R2134
Technical Datasheet
Transistor PolarityDual N Channel
IGBT ConfigurationDual
DC Collector Current683A
Continuous Collector Current683A
Collector Emitter Saturation Voltage1.8V
Collector Emitter Saturation Voltage Vce(on)1.8V
Power Dissipation Pd-
Power Dissipation-
Operating Temperature Max175°C
Junction Temperature, Tj Max175°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleSEMiX 3s
No. of Pins20Pins
IGBT TerminationStud
IGBT TechnologyIGBT 4 [Trench]
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
Transistor Polarity
Dual N Channel
DC Collector Current
683A
Collector Emitter Saturation Voltage
1.8V
Power Dissipation Pd
-
Operating Temperature Max
175°C
Collector Emitter Voltage V(br)ceo
1.2kV
No. of Pins
20Pins
IGBT Technology
IGBT 4 [Trench]
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
IGBT Configuration
Dual
Continuous Collector Current
683A
Collector Emitter Saturation Voltage Vce(on)
1.8V
Power Dissipation
-
Junction Temperature, Tj Max
175°C
Transistor Case Style
SEMiX 3s
IGBT Termination
Stud
Collector Emitter Voltage Max
1.2kV
Product Range
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate