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SK 150 GB 066 T
IGBT Module, Half Bridge, 124 A, 600 V, 175 °C
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 25 week(s)
| Quantity | Price |
|---|---|
| 10+ | $136.070 |
Price for:Each
Minimum: 10
Multiple: 10
$1,360.70
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Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSK 150 GB 066 T
Newark Part No.77R2190
Technical Datasheet
IGBT ConfigurationHalf Bridge
Continuous Collector Current124A
DC Collector Current124A
Collector Emitter Saturation Voltage Vce(on)600V
Collector Emitter Saturation Voltage600V
Power Dissipation-
Power Dissipation Pd-
Junction Temperature, Tj Max175°C
Operating Temperature Max175°C
Collector Emitter Voltage V(br)ceo800mV
Transistor Case Style-
IGBT TerminationPress Fit
No. of Pins28Pins
IGBT TechnologyIGBT 3 [Trench]
Collector Emitter Voltage Max800mV
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
IGBT Configuration
Half Bridge
DC Collector Current
124A
Collector Emitter Saturation Voltage
600V
Power Dissipation Pd
-
Operating Temperature Max
175°C
Transistor Case Style
-
No. of Pins
28Pins
Collector Emitter Voltage Max
800mV
Product Range
-
Continuous Collector Current
124A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation
-
Junction Temperature, Tj Max
175°C
Collector Emitter Voltage V(br)ceo
800mV
IGBT Termination
Press Fit
IGBT Technology
IGBT 3 [Trench]
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate