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Product Information
ManufacturerSOLID STATE
Manufacturer Part No2N6660
Newark Part No.14R8415
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id1.1A
On Resistance Rds(on)2.7ohm
Drain Source On State Resistance2.7ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd6.25W
Transistor Case StyleTO-205AF
Gate Source Threshold Voltage Max1.5V
Power Dissipation6.25W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The 2N6660 is a 60V N-channel Enhancement Mode MOSFET designed for use in switching regulators, converters and motor drivers.
Applications
Power Management, Industrial, Motor Drive & Control
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
2.7ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
6.25W
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
1.1A
Drain Source On State Resistance
2.7ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-205AF
Power Dissipation
6.25W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability