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GD400HFY120C2S
IGBT Module, Half Bridge, 630 A, 2 V, 2.083 kW, 150 °C, Module
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| Quantity | Price |
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| 1+ | $32.850 |
| 5+ | $32.850 |
| 10+ | $32.850 |
| 36+ | $32.850 |
| 60+ | $32.850 |
| 108+ | $32.850 |
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Product Information
ManufacturerSTARPOWER
Manufacturer Part NoGD400HFY120C2S
Newark Part No.93AC7045
Technical Datasheet
Transistor PolarityDual N Channel
IGBT ConfigurationHalf Bridge
DC Collector Current630A
Continuous Collector Current630A
Collector Emitter Saturation Voltage Vce(on)2V
Collector Emitter Saturation Voltage2V
Power Dissipation Pd2.083kW
Power Dissipation2.083kW
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
IGBT TerminationStud
No. of Pins11Pins
Collector Emitter Voltage Max1.2kV
IGBT TechnologyTrench Field Stop
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
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Product Overview
Starpower IGBT Modules and Arrays provide ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. With key features of Trench IGBT technology, maximum junction temperature 175°C and an Isolated copper baseplate using DBC technology.
Technical Specifications
Transistor Polarity
Dual N Channel
DC Collector Current
630A
Collector Emitter Saturation Voltage Vce(on)
2V
Power Dissipation Pd
2.083kW
Collector Emitter Voltage V(br)ceo
1.2kV
Junction Temperature, Tj Max
150°C
IGBT Termination
Stud
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Half Bridge
Continuous Collector Current
630A
Collector Emitter Saturation Voltage
2V
Power Dissipation
2.083kW
Operating Temperature Max
150°C
Transistor Case Style
Module
No. of Pins
11Pins
IGBT Technology
Trench Field Stop
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate