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MD200HFR120C2S
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 299 A, 1.2 kV, 0.0087 ohm, Module
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
| Quantity | Price |
|---|---|
| 1+ | $896.340 |
| 5+ | $887.540 |
| 12+ | $878.990 |
| 30+ | $844.440 |
Price for:Each
Minimum: 1
Multiple: 1
$896.34
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Product Information
ManufacturerSTARPOWER
Manufacturer Part NoMD200HFR120C2S
Newark Part No.93AC7199
Technical Datasheet
Transistor PolarityDual N Channel
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id299A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.0067ohm
Drain Source On State Resistance0.0087ohm
Transistor Case StyleModule
Power Dissipation Pd-
No. of Pins-
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.6V
Power Dissipation-
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Product Overview
Starpower IGBT Modules and Arrays provide ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. With key features of Trench IGBT technology, maximum junction temperature 175°C and an Isolated copper baseplate using DBC technology.
Technical Specifications
Transistor Polarity
Dual N Channel
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
0.0087ohm
Power Dissipation Pd
-
Rds(on) Test Voltage
18V
Power Dissipation
-
Product Range
-
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
299A
On Resistance Rds(on)
0.0067ohm
Transistor Case Style
Module
No. of Pins
-
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
150°C
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate