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SCTWA60N120G2-4
Silicon Carbide MOSFET, Single, N Channel, 60 A, 1.2 kV, 0.035 ohm, HiP247
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCTWA60N120G2-4
Newark Part No.57AJ5663
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 24 week(s)
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| Quantity | Price |
|---|---|
| 1+ | $26.610 |
| 10+ | $22.780 |
| 25+ | $21.620 |
| 50+ | $21.110 |
| 100+ | $20.580 |
Price for:Each
Minimum: 1
Multiple: 1
$26.61
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCTWA60N120G2-4
Newark Part No.57AJ5663
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id60A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.035ohm
Drain Source On State Resistance0.035ohm
Transistor Case StyleHiP247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max3V
Power Dissipation Pd389W
Power Dissipation389W
Operating Temperature Max200°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
0.035ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
3V
Power Dissipation
389W
Product Range
-
Transistor Polarity
N Channel
Continuous Drain Current Id
60A
On Resistance Rds(on)
0.035ohm
Transistor Case Style
HiP247
Rds(on) Test Voltage
18V
Power Dissipation Pd
389W
Operating Temperature Max
200°C
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate