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STB55NF06LT4
Power MOSFET, N Channel, 30 V, 55 A, 0.018 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB55NF06LT4
Newark Part No.33R1125
Technical Datasheet
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB55NF06LT4
Newark Part No.33R1125
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id55A
On Resistance Rds(on)0.014ohm
Drain Source On State Resistance0.018ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd95W
Rds(on) Test Voltage16V
Gate Source Threshold Voltage Max1.7V
Power Dissipation95W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The STB55NF06LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
- Exceptional dV/dt capability
- 100% Avalanche tested
- Application oriented characterization
- -55 to 175°C Operating junction temperature
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
55A
Drain Source On State Resistance
0.018ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
16V
Power Dissipation
95W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.014ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
95W
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate