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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB55NF06T4
Newark Part No.33R1126
Technical Datasheet
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB55NF06T4
Newark Part No.33R1126
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id27.5A
Drain Source On State Resistance0.015ohm
On Resistance Rds(on)0.015ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd110W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The STB55NF06T4 is a STripFET™ II N-channel Power MOSFET specifically designed to minimize input capacitance and gate charge. The device is suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications and applications with low gate charge driving requirements.
- 100% Avalanche tested
- Exceptional dV/dt capability
- -55 to 175°C Operating junction temperature range
Applications
Power Management, Communications & Networking, Computers & Computer Peripherals, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
27.5A
On Resistance Rds(on)
0.015ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.015ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
110W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability