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STB75NF20
Power MOSFET, N Channel, 200 V, 37 A, 0.028 ohm, TO-263 (D2PAK), Surface Mount
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $6.650 |
| 10+ | $5.110 |
| 25+ | $4.840 |
| 50+ | $4.550 |
| 100+ | $4.280 |
| 250+ | $4.240 |
| 500+ | $4.210 |
| 1000+ | $4.180 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$6.65
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB75NF20
Newark Part No.33R1133
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id37A
Drain Source On State Resistance0.028ohm
On Resistance Rds(on)0.028ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd190W
Gate Source Threshold Voltage Max3V
Power Dissipation190W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STB75NF20 is a STripFET™ II N-channel Power MOSFET specifically designed to minimize input capacitance and gate charge. It is suitable as primary switch in advanced high-efficiency isolated DC-to-DC converters.
- Exceptional dV/dt capability
- Low gate charge
- 100% Avalanche tested
- -55 to 150°C Operating junction temperature
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
37A
On Resistance Rds(on)
0.028ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
190W
Power Dissipation
190W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.028ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate