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STD5NM60T4
Power MOSFET, N Channel, 650 V, 5 A, 1 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD5NM60T4Copy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Re-Reel26M3528RL
Cut Tape26M3528
Your Part Number
880 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $3.280 | $3.28 |
| Total Price | $3.28 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $3.280 |
| 50+ | $2.260 |
| 100+ | $1.670 |
| 250+ | $1.560 |
| 500+ | $1.440 |
| 1000+ | $1.390 |
| 2500+ | $1.330 |
| 5000+ | $1.300 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD5NM60T4Copy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Re-Reel26M3528RL
Cut Tape26M3528
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id5A
On Resistance Rds(on)1ohm
Drain Source On State Resistance1ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd96W
Gate Source Threshold Voltage Max4V
Power Dissipation96W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STD5NM60T4 is an N-channel MDmesh™ Power MOSFET has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The MDmesh™ is a new revolutionary power MOSFET technology that associates the multiple drain process with the company's PowerMESH™ horizontal layout. The adoption of the company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
- 100% Avalanche tested
- High dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- Low gate input resistance
Applications
Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5A
Drain Source On State Resistance
1ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
96W
Power Dissipation
96W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
650V
On Resistance Rds(on)
1ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for STD5NM60T4
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Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate