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STN1NK80Z
Power MOSFET, N Channel, 800 V, 500 mA, 16 ohm, SOT-223, Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTN1NK80Z
Newark Part No.33R1237
Technical Datasheet
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTN1NK80Z
Newark Part No.33R1237
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id500mA
Drain Source On State Resistance16ohm
On Resistance Rds(on)13ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage30V
Power Dissipation Pd2.5W
Gate Source Threshold Voltage Max3.75V
Power Dissipation2.5W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The STN1NK80Z is a 800V N-channel Zener-protected SuperMESH™ MOSFET with extreme optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- Extremely high dv/dt capability
- ESD improved capability
- 100% Avalanche tested
- New high voltage benchmark
- Gate charge minimized
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
500mA
On Resistance Rds(on)
13ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.5W
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
800V
Drain Source On State Resistance
16ohm
Transistor Case Style
SOT-223
Rds(on) Test Voltage
30V
Gate Source Threshold Voltage Max
3.75V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate