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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP20NK50Z
Newark Part No.38K7923
Technical Datasheet
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500+ | $2.940 |
1000+ | $2.830 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP20NK50Z
Newark Part No.38K7923
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id17A
On Resistance Rds(on)0.27ohm
Drain Source On State Resistance0.27ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Power Dissipation Pd190W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation190W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The STP20NK50Z is a N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology. It is achieved through optimization of well-established strip-based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, it is designed to ensure a high level of dV/dt capability for the most demanding applications.
- Extremely high dV/dt capability
- 100% Avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
500V
On Resistance Rds(on)
0.27ohm
Transistor Case Style
TO-220
Power Dissipation Pd
190W
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
17A
Drain Source On State Resistance
0.27ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
190W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability