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STP24N60DM2
Power MOSFET, N Channel, 600 V, 18 A, 0.175 ohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP24N60DM2
Newark Part No.45AC7709
Product RangeFDmesh II Plus
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 16 week(s)
| Quantity | Price |
|---|---|
| 1+ | $4.700 |
| 10+ | $4.240 |
| 25+ | $3.760 |
| 50+ | $3.300 |
| 100+ | $3.160 |
| 250+ | $3.000 |
| 500+ | $2.830 |
Price for:Each
Minimum: 1
Multiple: 1
$4.70
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP24N60DM2
Newark Part No.45AC7709
Product RangeFDmesh II Plus
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id18A
Drain Source On State Resistance0.175ohm
On Resistance Rds(on)0.175ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd150W
Gate Source Threshold Voltage Max4V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeFDmesh II Plus
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
STP24N60DM2 is a N-channel 600V, 0.175 ohm typ, 18A FDmesh II Plus™ low Qg Power MOSFET in a TO-220 package. This FDmesh II Plus™ low Qg Power MOSFET with intrinsic fast-recovery body diode is produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. Therefore, suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
- Extremely low gate charge and input capacitance
- Lower RDS(on) x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
- Extremely high dv/dt and avalanche capabilities
- Operating junction temperature of 150°C
- Suited for switching applications
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.175ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
FDmesh II Plus
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
18A
On Resistance Rds(on)
0.175ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
150W
Power Dissipation
150W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate