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Quantity | Price |
---|---|
1+ | $7.140 |
10+ | $6.850 |
25+ | $4.700 |
50+ | $4.630 |
100+ | $4.570 |
250+ | $4.330 |
500+ | $4.120 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP3N150
Newark Part No.59M2210
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds1.5kV
Continuous Drain Current Id2.5A
Drain Source On State Resistance6ohm
On Resistance Rds(on)6ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd140W
Gate Source Threshold Voltage Max4V
Power Dissipation140W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The STP3N150 is a PowerMESH™ N-channel Power MOSFET features minimized intrinsic capacitances and Qg. This Power MOSFET designed using the company's consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
- 100% Avalanche tested
- High speed switching
- Creepage distance path is 5.4mm
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
1.5kV
Drain Source On State Resistance
6ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
2.5A
On Resistance Rds(on)
6ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
140W
Power Dissipation
140W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability