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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP6NK60ZFP
Newark Part No.26M3702
Technical Datasheet
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP6NK60ZFP
Newark Part No.26M3702
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id6A
On Resistance Rds(on)1.2ohm
Drain Source On State Resistance1.2ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd30W
Gate Source Threshold Voltage Max3.75V
Power Dissipation30W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The STP6NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- Extremely high dv/dt capability
- 100% Avalanche tested
- Gate charge minimized
Applications
Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
1.2ohm
Transistor Case Style
TO-220FP
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
6A
Drain Source On State Resistance
1.2ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
30W
Power Dissipation
30W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability