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2SC2713-GR,LF(T
Bipolar Transistor Array, NPN, 120 V, 100 A, 200 mW
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| Quantity | Price |
|---|---|
| 1+ | $0.234 |
| 10+ | $0.181 |
| 25+ | $0.110 |
| 50+ | $0.090 |
| 100+ | $0.076 |
| 250+ | $0.061 |
| 500+ | $0.048 |
| 1000+ | $0.046 |
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Multiple: 1
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Product Information
ManufacturerTOSHIBA
Manufacturer Part No2SC2713-GR,LF(T
Newark Part No.10AK1268
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max NPN120V
Collector Emitter Voltage Max120V
Continuous Collector Current100mA
Collector Emitter Voltage Max PNP-
Continuous Collector Current NPN100A
Power Dissipation200mW
Continuous Collector Current PNP-
Power Dissipation NPN200mW
Power Dissipation PNP-
Transition Frequency100MHz
DC Current Gain hFE Min NPN200hFE
DC Current Gain hFE Min PNP-
DC Current Gain hFE Min200hFE
Transistor Case StyleTO-236MOD
No. of Pins3Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN100MHz
Transition Frequency PNP-
Product Range-
QualificationAEC-Q101
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
120V
Collector Emitter Voltage Max PNP
-
Power Dissipation
200mW
Power Dissipation NPN
200mW
Transition Frequency
100MHz
DC Current Gain hFE Min PNP
-
Transistor Case Style
TO-236MOD
Transistor Mounting
Surface Mount
Transition Frequency NPN
100MHz
Product Range
-
SVHC
To Be Advised
Collector Emitter Voltage Max NPN
120V
Continuous Collector Current
100mA
Continuous Collector Current NPN
100A
Continuous Collector Current PNP
-
Power Dissipation PNP
-
DC Current Gain hFE Min NPN
200hFE
DC Current Gain hFE Min
200hFE
No. of Pins
3Pins
Operating Temperature Max
150°C
Transition Frequency PNP
-
Qualification
AEC-Q101
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate