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GT50J325
IGBT, 50 A, 2.45 V, 240 W, 600 V, TO-3P, 3 Pins
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No Longer Available
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoGT50J325
Newark Part No.24M2387
Technical Datasheet
DC Collector Current50A
Continuous Collector Current50A
Collector Emitter Saturation Voltage2.45V
Collector Emitter Saturation Voltage Vce(on)2.45V
Power Dissipation Pd240W
Power Dissipation240W
Collector Emitter Voltage Max600V
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleTO-3P
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCNo SVHC (25-Jun-2020)
Product Overview
The GT50J325 from Toshiba is a N channel silicon insulated gate bipolar transistor in through hole TO-3P package. IGBT typically used at fast switching and high power switching applications.
- Fourth generation IGBT
- Enhancement mode type
- Fast switching
- Operating frequency up to 50KHz
- Maximum collector emitter saturation voltage of 2.45V
- FRD included between emitter and collector
- Collector emitter voltage VCES of 600V
- DC collector current of 50A
- Junction temperature of 150°C
- Collector power dissipation of 240W
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial
Technical Specifications
DC Collector Current
50A
Collector Emitter Saturation Voltage
2.45V
Power Dissipation Pd
240W
Collector Emitter Voltage Max
600V
Transistor Case Style
TO-3P
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2020)
Continuous Collector Current
50A
Collector Emitter Saturation Voltage Vce(on)
2.45V
Power Dissipation
240W
Collector Emitter Voltage V(br)ceo
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (25-Jun-2020)
Download Product Compliance Certificate
Product Compliance Certificate