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SSM6N7002KFU,LXH(T
Dual MOSFET, Dual N Channel, 60 V, 300 mA, 1.5 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part NoSSM6N7002KFU,LXH(T
Newark Part No.03AM3068
Product RangeU-MOSVII-H Series
Technical Datasheet
2,775 In Stock
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2375 Delivery in 2-4 Business Days(UK stock)
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| Quantity | Price |
|---|---|
| 1+ | $0.450 |
| 10+ | $0.346 |
| 25+ | $0.237 |
| 50+ | $0.196 |
| 100+ | $0.164 |
| 250+ | $0.132 |
| 500+ | $0.110 |
| 1000+ | $0.091 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.45
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoSSM6N7002KFU,LXH(T
Newark Part No.03AM3068
Product RangeU-MOSVII-H Series
Technical Datasheet
Channel TypeDual N Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel300mA
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel1.5ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel500mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product RangeU-MOSVII-H Series
QualificationAEC-Q101
SVHCTo Be Advised
Technical Specifications
Channel Type
Dual N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
U-MOSVII-H Series
SVHC
To Be Advised
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
300mA
Drain Source On State Resistance N Channel
1.5ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
500mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate