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TK32E12N1,S1X(S
Power MOSFET, N Channel, 120 V, 60 A, 11 mohm, TO-220, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $0.448 |
| 10+ | $0.448 |
| 100+ | $0.448 |
| 500+ | $0.448 |
| 1000+ | $0.448 |
| 2500+ | $0.448 |
| 10000+ | $0.448 |
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTK32E12N1,S1X(S
Newark Part No.09AK8691
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds120V
Continuous Drain Current Id60A
On Resistance Rds(on)0.011ohm
Drain Source On State Resistance11mohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation98W
Power Dissipation Pd98W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
120V
On Resistance Rds(on)
0.011ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
98W
No. of Pins
3Pins
Product Range
-
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Drain Current Id
60A
Drain Source On State Resistance
11mohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
98W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate