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TPW4R008NH,L1Q(M
Power MOSFET, N Channel, 80 V, 116 A, 0.0033 ohm, DSOP, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $1.060 |
| 10+ | $1.060 |
| 25+ | $1.060 |
| 50+ | $1.060 |
| 100+ | $1.060 |
| 250+ | $1.060 |
| 500+ | $1.060 |
| 1000+ | $1.060 |
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Multiple: 1
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTPW4R008NH,L1Q(M
Newark Part No.09AK9038
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id116A
Drain Source On State Resistance3300µohm
On Resistance Rds(on)0.0033ohm
Transistor Case StyleDSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation2.5W
Power Dissipation Pd2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
Drain Source On State Resistance
3300µohm
Transistor Case Style
DSOP
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
No. of Pins
8Pins
Product Range
-
SVHC
To Be Advised
Channel Type
N Channel
Continuous Drain Current Id
116A
On Resistance Rds(on)
0.0033ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
2.5W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate