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UF3C120150K4S
Silicon Carbide MOSFET, Single, N Channel, 18.4 A, 1.2 kV, 150 mohm, TO-247
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| Quantity | Price |
|---|---|
| 1+ | $5.880 |
| 10+ | $5.880 |
| 25+ | $5.880 |
| 50+ | $5.880 |
| 100+ | $5.880 |
| 250+ | $5.880 |
| 500+ | $5.880 |
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Multiple: 1
$5.88
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Product Information
ManufacturerONSEMI
Manufacturer Part NoUF3C120150K4S
Newark Part No.47AK1761
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id18.4A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.15ohm
Drain Source On State Resistance150mohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage12V
Gate Source Threshold Voltage Max4.4V
Power Dissipation166.7W
Power Dissipation Pd166.7W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
150mohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.4V
Power Dissipation Pd
166.7W
Product Range
-
Channel Type
N Channel
Continuous Drain Current Id
18.4A
On Resistance Rds(on)
0.15ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
12V
Power Dissipation
166.7W
Operating Temperature Max
175°C
SVHC
No SVHC (17-Jan-2023)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate