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UF3C120400B7S
Silicon Carbide MOSFET, Single, N Channel, 7.6 A, 1.2 kV, 410 mohm, D2PAK
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| Quantity | Price |
|---|---|
| 1+ | $5.280 |
| 10+ | $4.840 |
| 25+ | $4.470 |
| 50+ | $4.470 |
| 100+ | $4.470 |
| 250+ | $4.470 |
| 500+ | $4.470 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$5.28
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Product Information
ManufacturerONSEMI
Manufacturer Part NoUF3C120400B7S
Newark Part No.78AK8897
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id7.6A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance410mohm
Transistor Case StyleD2PAK
No. of Pins7Pins
Rds(on) Test Voltage12V
Gate Source Threshold Voltage Max6V
Power Dissipation100W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
7.6A
Drain Source On State Resistance
410mohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
6V
Operating Temperature Max
175°C
SVHC
No SVHC (17-Jan-2023)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
D2PAK
Rds(on) Test Voltage
12V
Power Dissipation
100W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate