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IRFD110PBF
Power MOSFET, N Channel, 100 V, 1 A, 0.54 ohm, HVMDIP, Through Hole
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No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFD110PBF
Newark Part No.19K8153
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1A
On Resistance Rds(on)0.54ohm
Drain Source On State Resistance0.54ohm
Transistor MountingThrough Hole
Power Dissipation Pd1.3W
Rds(on) Test Voltage10V
Transistor Case StyleHVMDIP
Gate Source Threshold Voltage Max2V
Power Dissipation1.3W
No. of Pins4Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (10-Jun-2022)
Product Overview
The IRFD110PBF is a N-channel Power MOSFET with combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Automatic insertion
- End stackable
- 175°C Operating temperature
- Fast switching and ease of paralleling
Applications
Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.54ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
4Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
1A
Drain Source On State Resistance
0.54ohm
Power Dissipation Pd
1.3W
Transistor Case Style
HVMDIP
Power Dissipation
1.3W
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (10-Jun-2022)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability