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2N4338-E3
JFET Transistor, Junction Field Effect, -57 V, 600 µA, -1 V, TO-206AA, 3 Pin, 175 °C
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part No2N4338-E3
Newark Part No.06J8861
Technical Datasheet
Breakdown Voltage Vbr-57V
Gate Source Breakdown Voltage Max-57V
Zero Gate Voltage Drain Current Idss Min200µA
Zero Gate Voltage Drain Current Max600µA
Gate Source Cutoff Voltage Max-1V
Transistor Case StyleTO-206AA
Transistor TypeJFET
No. of Pins3 Pin
Channel TypeN Channel
Transistor MountingThrough Hole
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Product Overview
The 2N4338-E3 is a 57V N-channel JFET in a hermetically sealed case and is designed for sensitive amplifier stages at low to mid frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy. Suitable for infrared detector amplifier and ultra high input impedance amplifier applications.
- High input impedance
- Low noise
- High gain Av = 80 at 20µA
- Low signal loss/system error
- High system sensitivity
Applications
Security, Sensing & Instrumentation
Technical Specifications
Breakdown Voltage Vbr
-57V
Zero Gate Voltage Drain Current Idss Min
200µA
Gate Source Cutoff Voltage Max
-1V
Transistor Type
JFET
Channel Type
N Channel
Operating Temperature Max
175°C
Product Range
-
SVHC
To Be Advised
Gate Source Breakdown Voltage Max
-57V
Zero Gate Voltage Drain Current Max
600µA
Transistor Case Style
TO-206AA
No. of Pins
3 Pin
Transistor Mounting
Through Hole
Qualification
-
MSL
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate