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2N5116
JFET Transistor, Junction Field Effect, 30 V, -25 mA, 4 V, TO-206AA, 3 Pin, 200 °C
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No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part No2N5116
Newark Part No.13C1999
Technical Datasheet
Gate Source Breakdown Voltage Max30V
Breakdown Voltage Vbr30V
Zero Gate Voltage Drain Current Idss Min-5mA
Zero Gate Voltage Drain Current Max-25mA
Gate Source Cutoff Voltage Max4V
Transistor Case StyleTO-206AA
Transistor TypeJFET
No. of Pins3 Pin
Channel TypeP Channel
Transistor MountingThrough Hole
Operating Temperature Max200°C
Qualification-
Product Range-
SVHCTo Be Advised
Technical Specifications
Gate Source Breakdown Voltage Max
30V
Zero Gate Voltage Drain Current Idss Min
-5mA
Gate Source Cutoff Voltage Max
4V
Transistor Type
JFET
Channel Type
P Channel
Operating Temperature Max
200°C
Product Range
-
SVHC
To Be Advised
Breakdown Voltage Vbr
30V
Zero Gate Voltage Drain Current Max
-25mA
Transistor Case Style
TO-206AA
No. of Pins
3 Pin
Transistor Mounting
Through Hole
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate