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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF520PBF
Newark Part No.63J7305
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id9.2A
Drain Source On State Resistance0.27ohm
On Resistance Rds(on)0.27ohm
Transistor MountingThrough Hole
Power Dissipation Pd60W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-220AB
Power Dissipation60W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The IRF520PBF is a 100V N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout the industry.
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- ±20V Gate to source voltage
- 2.5°C/W Thermal resistance, junction to case
- 62°C/W Thermal resistance, junction to ambient
Applications
Industrial, Commercial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.27ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220AB
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
9.2A
On Resistance Rds(on)
0.27ohm
Power Dissipation Pd
60W
Gate Source Threshold Voltage Max
4V
Power Dissipation
60W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Alternatives for IRF520PBF
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Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability