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IRF630PBF.
Power MOSFET, N Channel, 200 V, 9 A, 400 mohm, TO-220AB, Through Hole
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500 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.615 |
| 10+ | $0.609 |
| 30+ | $0.601 |
| 50+ | $0.593 |
| 100+ | $0.586 |
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Multiple: 1
$0.62
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF630PBF.
Newark Part No.26AC0606
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id9A
On Resistance Rds(on)0.4ohm
Drain Source On State Resistance400mohm
Transistor MountingThrough Hole
Power Dissipation Pd74W
Rds(on) Test Voltage10V
Transistor Case StyleTO-220AB
Gate Source Threshold Voltage Max4V
Power Dissipation74W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The IRF630PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Ease of paralleling
- Simple drive requirements
Applications
Industrial, Power Management, Commercial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.4ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
9A
Drain Source On State Resistance
400mohm
Power Dissipation Pd
74W
Transistor Case Style
TO-220AB
Power Dissipation
74W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:To be advised
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate