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Available to Order
Manufacturer Standard Lead Time: 10 week(s)
Quantity | Price |
---|---|
10+ | $2.500 |
Price for:Each
Minimum: 1000
Multiple: 1000
$2,500.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFIB6N60APBF
Newark Part No.63J6739
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id5.5A
Drain Source On State Resistance0.75ohm
On Resistance Rds(on)0.75ohm
Transistor MountingThrough Hole
Power Dissipation Pd60W
Rds(on) Test Voltage10V
Transistor Case StyleTO-220FP
Gate Source Threshold Voltage Max4V
Power Dissipation60W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The IRFIB6N60APBF is a 600V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, uninterruptible power supply and high speed power switching applications.
- Low gate charge Qg results in simple drive requirement
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche voltage and current
- High voltage isolation
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.75ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
5.5A
On Resistance Rds(on)
0.75ohm
Power Dissipation Pd
60W
Transistor Case Style
TO-220FP
Power Dissipation
60W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate