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Quantity | Price |
---|---|
1+ | $1.400 |
10+ | $1.400 |
25+ | $1.400 |
50+ | $1.300 |
100+ | $1.300 |
500+ | $1.210 |
1000+ | $1.210 |
2500+ | $1.210 |
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Multiple: 1
$1.40
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFZ40PBF
Newark Part No.19K8198
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id35A
Drain Source On State Resistance0.028ohm
On Resistance Rds(on)0.028ohm
Transistor MountingThrough Hole
Power Dissipation Pd150W
Rds(on) Test Voltage10V
Transistor Case StyleTO-220
Gate Source Threshold Voltage Max4V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The IRFZ40PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
- Dynamic dV/dt rating
- -55 to 175°C Operating temperature range
- Ease of paralleling
- Simple drive requirements
Applications
Industrial, Power Management, Commercial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
50V
Drain Source On State Resistance
0.028ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
35A
On Resistance Rds(on)
0.028ohm
Power Dissipation Pd
150W
Transistor Case Style
TO-220
Power Dissipation
150W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability