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SI4100DY-T1-GE3
Power MOSFET, N Channel, 100 V, 6.8 A, 0.063 ohm, SOIC, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $1.660 |
| 10+ | $1.300 |
| 25+ | $1.230 |
| 50+ | $1.140 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$1.66
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4100DY-T1-GE3
Newark Part No.55R1914
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id6.8A
On Resistance Rds(on)0.051ohm
Drain Source On State Resistance0.063ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd6W
Gate Source Threshold Voltage Max2V
Power Dissipation6W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI4100DY-T1-GE3 is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for high frequency boost converter and LED backlight for LCD TV applications.
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management, LED Lighting
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
6.8A
Drain Source On State Resistance
0.063ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
6W
Power Dissipation
6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.051ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability