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SI4128DY-T1-GE3
Power MOSFET, N Channel, 30 V, 10.9 A, 0.024 ohm, SOIC, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.401 |
| 10+ | $0.398 |
| 25+ | $0.398 |
| 50+ | $0.398 |
| 100+ | $0.364 |
| 500+ | $0.336 |
| 1000+ | $0.336 |
| 2500+ | $0.336 |
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4128DY-T1-GE3
Newark Part No.55R1919
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id10.9A
Drain Source On State Resistance0.024ohm
On Resistance Rds(on)0.02ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd5W
Gate Source Threshold Voltage Max1V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI4128DY-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch and system power applications.
- 100% Rg tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
10.9A
On Resistance Rds(on)
0.02ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
5W
Power Dissipation
5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.024ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate