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SI4946BEY-T1-GE3
Dual MOSFET, N Channel, 60 V, 60 V, 6.5 A, 6.5 A, 0.033 ohm
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ManufacturerVISHAY
Manufacturer Part NoSI4946BEY-T1-GE3
Newark Part No.01AC4998
Product RangeTrenchFET Series
Technical Datasheet
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4946BEY-T1-GE3
Newark Part No.01AC4998
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id6.5A
Continuous Drain Current Id N Channel6.5A
Continuous Drain Current Id P Channel6.5A
Drain Source On State Resistance N Channel0.033ohm
Drain Source On State Resistance P Channel0.033ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.7W
Power Dissipation P Channel3.7W
Operating Temperature Max175°C
Product RangeTrenchFET Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
- Dual N-channel 60-V (D-S) TrenchFET® power MOSFET
- 175°C maximum junction temperature
- 100 % Rg Tested
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
6.5A
Continuous Drain Current Id P Channel
6.5A
Drain Source On State Resistance P Channel
0.033ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.7W
Product Range
TrenchFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
6.5A
Drain Source On State Resistance N Channel
0.033ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.7W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability