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SI5504BDC-T1-E3
DUAL MOSFET,N/P-CH, 30V, 4A/1206 CHIPFET ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSI5504BDC-T1-E3
Newark Part No.57AJ0450
Product RangeTrenchFET Series
Technical Datasheet
1,173 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.720 |
| 10+ | $1.220 |
| 25+ | $1.130 |
| 50+ | $1.040 |
| 100+ | $0.943 |
| 250+ | $0.942 |
| 500+ | $0.811 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.72
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI5504BDC-T1-E3
Newark Part No.57AJ0450
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id4A
Continuous Drain Current Id N Channel4A
Continuous Drain Current Id P Channel4A
Drain Source On State Resistance N Channel0.053ohm
Drain Source On State Resistance P Channel0.053ohm
Transistor Case StyleChipFET
No. of Pins8Pins
Power Dissipation N Channel3.12W
Power Dissipation P Channel3.12W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
4A
Continuous Drain Current Id P Channel
4A
Drain Source On State Resistance P Channel
0.053ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.12W
Product Range
TrenchFET Series
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
4A
Drain Source On State Resistance N Channel
0.053ohm
Transistor Case Style
ChipFET
Power Dissipation N Channel
3.12W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability